ON NTHD4508NT1G

MOSFET (оксид металла)Затвор логического уровня2 N-канала (сдвоенные)20V3A75 мОм @ 3,1 А, 4,5 В1,2 В @ 250 мкА

Features

Tape & Reel (TR) Package
MOSFET (Metal Oxide) Technology
Logic Level Gate FET Feature
20V Drain to Source Voltage (Vdss)
3A Current - Continuous Drain (Id) @ 25°C
75mOhm @ 3.1A, 4.5V Rds On (Max) @ Id, Vgs
1.2V @ 250µA Vgs(th) (Max) @ Id
4nC @ 4.5V Gate Charge (Qg) (Max) @ Vgs
180pF @ 10V Input Capacitance (Ciss) (Max) @ Vds
1.13W Power - Max
Surface Mount Mounting Type
ChipFET™ Supplier Device Package

Applications

? Low RDS(on) and Fast Switching Speed

? Leadless ChipFET Package has 40% Smaller Footprint than TSOP?6

? Excellent Thermal Capabilities Where Heat Transfer is Required

? Pb?Free Package is Available

NTHD4508NT1G         Applications

? DC?DC Buck/Boost Converters

? Battery and Low Side Switching in Portable Equipment Such as MP3

Players, Cell Phones, DSCs and PDAs

? Level Shifting