ON NTJD4152PT2G

MOSFET (оксид металла)2 P-канала (сдвоенные)20V880 мА260 мОм @ 880 мА, 4,5 В1,2 В @ 250 мкА

Overview

The NTJD4152PT1G is MOSFET 2P-CH 20V 0.88A SOT-363, that includes NTJD4152P Series, they are designed to operate with a Digi-ReelR Alternate Packaging Packaging, Unit Weight is shown on datasheet note for use in a 0.000265 oz, that offers Mounting Style features such as SMD/SMT, Package Case is designed to work in 6-TSSOP, SC-88, SOT-363, as well as the Si Technology, it has an Operating Temperature range of -55°C ~ 150°C (TJ). In addition, the Mounting Type is Surface Mount, the device is offered in 2 Channel Number of Channels, the device has a SC-88/SC70-6/SOT-363 of Supplier Device Package, and Configuration is Dual, and the FET Type is 2 P-Channel (Dual), and Power Max is 272mW, and the Transistor Type is 2 P-Channel, and Drain to Source Voltage Vdss is 20V, and the Input Capacitance Ciss Vds is 155pF @ 20V, and FET Feature is Logic Level Gate, and the Current Continuous Drain Id 25°C is 880mA, and Rds On Max Id Vgs is 260 mOhm @ 880mA, 4.5V, and the Vgs th Max Id is 450mV @ 250μA, and Gate Charge Qg Vgs is 2.2nC @ 4.5V, and the Pd Power Dissipation is 272 mW, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and Fall Time is 6.5 ns, and the Rise Time is 6.5 ns, and Vgs Gate Source Voltage is 12 V, and the Id Continuous Drain Current is - 880 mA, and Vds Drain Source Breakdown Voltage is - 20 V, and the Rds On Drain Source Resistance is 600 mOhms, and Transistor Polarity is P-Channel, and the Typical Turn Off Delay Time is 13.5 ns, and Typical Turn On Delay Time is 5.8 ns, and the Forward Transconductance Min is 3 S, and Channel Mode is Enhancement.

The NTJD4152PT1 is MOSFET 2P-CH 20V 0.88A SOT-363, that includes 880mA Current Continuous Drain Id 25°C, they are designed to operate with a 20V Drain to Source Voltage Vdss, FET Feature is shown on datasheet note for use in a Logic Level Gate, that offers FET Type features such as 2 P-Channel (Dual), Gate Charge Qg Vgs is designed to work in 2.2nC @ 4.5V, as well as the 155pF @ 20V Input Capacitance Ciss Vds, the device can also be used as Surface Mount Mounting Type, it has an Operating Temperature range of -55°C ~ 150°C (TJ), the device is offered in 6-TSSOP, SC-88, SOT-363 Package Case, the device has a Tape & Reel (TR) of Packaging, and Power Max is 272mW, and the Rds On Max Id Vgs is 260 mOhm @ 880mA, 4.5V, and Supplier Device Package is SC-88/SC70-6/SOT-363, and the Vgs th Max Id is 450mV @ 250μA.

Features

Tape & Reel (TR) Package
MOSFET (Metal Oxide) Technology
20V Drain to Source Voltage (Vdss)
880mA Current - Continuous Drain (Id) @ 25°C
260mOhm @ 880mA, 4.5V Rds On (Max) @ Id, Vgs
1.2V @ 250µA Vgs(th) (Max) @ Id
2.2nC @ 4.5V Gate Charge (Qg) (Max) @ Vgs
155pF @ 20V Input Capacitance (Ciss) (Max) @ Vds
272mW Power - Max
Surface Mount Mounting Type