ON NTLJD2104PTBG

MOSFET (оксид металла)Затвор логического уровня2 P-канала (сдвоенные)12V2.4A90 мОм @ 3 А, 4,5 В800 мВ при 250 мкА

Overview

The NTLGF3501NT2G is MOSFET NFET 3X3 20V 3.0A 9MOHM, that includes NTLGF3501N Series, they are designed to operate with a Reel Packaging, Unit Weight is shown on datasheet note for use in a 0.000744 oz, that offers Mounting Style features such as SMD/SMT, Package Case is designed to work in DFN-6, as well as the Si Technology, the device can also be used as 1 Channel Number of Channels. In addition, the Configuration is Single Dual Source, the device is offered in 1 N-Channel Transistor Type, the device has a 1.74 W of Pd Power Dissipation, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and Fall Time is 13.6 ns, and the Rise Time is 13.6 ns, and Vgs Gate Source Voltage is 20 V, and the Id Continuous Drain Current is 5.8 A, and Vds Drain Source Breakdown Voltage is 20 V, and the Rds On Drain Source Resistance is 9 mOhms, and Transistor Polarity is N-Channel, and the Typical Turn Off Delay Time is 9 ns, and Typical Turn On Delay Time is 4.8 ns, and the Forward Transconductance Min is 6.7 S, and Channel Mode is Enhancement.

NTLJ3113PT1G with circuit diagram manufactured by ON. The NTLJ3113PT1G is available in QFN Package, is part of the IC Chips.

Features

Tape & Reel (TR) Package
MOSFET (Metal Oxide) Technology
Logic Level Gate FET Feature
12V Drain to Source Voltage (Vdss)
2.4A Current - Continuous Drain (Id) @ 25°C
90mOhm @ 3A, 4.5V Rds On (Max) @ Id, Vgs
800mV @ 250µA Vgs(th) (Max) @ Id
8nC @ 4.5V Gate Charge (Qg) (Max) @ Vgs
467pF @ 6V Input Capacitance (Ciss) (Max) @ Vds
700mW Power - Max
Surface Mount Mounting Type