ON NTLTD7900ZR2G

MOSFET (оксид металла)Затвор логического уровня2 N-канала (сдвоенные)20V6A26 мОм @ 6,5 А, 4,5 В1 В @ 250 мкА

Overview

NTLLD4951NFTWG with pin details, that includes NTLLD4951NFTWG Series, they are designed to operate with a Tape & Reel (TR) Packaging, Package Case is shown on datasheet note for use in a 8-WDFN Exposed Pad, that offers Technology features such as Si, it has an Operating Temperature range of -55°C ~ 150°C (TJ), as well as the Surface Mount Mounting Type, the device can also be used as 8-WDFN (3x3) Supplier Device Package. In addition, the FET Type is 2 N-Channel (Dual) Asymmetrical, the device is offered in 800mW, 810mW Power Max, the device has a 30V of Drain to Source Voltage Vdss, and Input Capacitance Ciss Vds is 605pF @ 15V, and the FET Feature is Standard, and Current Continuous Drain Id 25°C is 5.5A, 6.3A, and the Rds On Max Id Vgs is 17.4 mOhm @ 9A, 10V, and Vgs th Max Id is 2.2V @ 250μA, and the Gate Charge Qg Vgs is 12nC @ 10V.

NTLTD7900ZR2 with circuit diagram manufactured by ON. The NTLTD7900ZR2 is available in MICRO-8 Package, is part of the FETs - Arrays.

Features

Tape & Reel (TR) Package
MOSFET (Metal Oxide) Technology
Logic Level Gate FET Feature
20V Drain to Source Voltage (Vdss)
6A Current - Continuous Drain (Id) @ 25°C
26mOhm @ 6.5A, 4.5V Rds On (Max) @ Id, Vgs
1V @ 250µA Vgs(th) (Max) @ Id
18nC @ 4.5V Gate Charge (Qg) (Max) @ Vgs
15pF @ 16V Input Capacitance (Ciss) (Max) @ Vds
1.5W Power - Max
Surface Mount Mounting Type