ON NTLUD3191PZTBG

MOSFET (оксид металла)Затвор логического уровня2 P-канала (сдвоенные)20V1.1A250 мОм @ 1,5 А, 4,5 В1 В @ 250 мкА

Overview

The NTLUD3191PZTAG is MOSFET 2P-CH 20V 1.1A 6UDFN, that includes Tape & Reel (TR) Packaging, they are designed to operate with a 6-UFDFN Exposed Pad Package Case, it has an Operating Temperature range of -55°C ~ 150°C (TJ), that offers Mounting Type features such as Surface Mount, Supplier Device Package is designed to work in 6-UDFN (1.6x1.6), as well as the 2 P-Channel (Dual) FET Type, the device can also be used as 500mW Power Max. In addition, the Drain to Source Voltage Vdss is 20V, the device is offered in 160pF @ 10V Input Capacitance Ciss Vds, the device has a Logic Level Gate of FET Feature, and Current Continuous Drain Id 25°C is 1.1A, and the Rds On Max Id Vgs is 250 mOhm @ 1.5A, 4.5V, and Vgs th Max Id is 1V @ 250μA, and the Gate Charge Qg Vgs is 3.5nC @ 4.5V.

NTLTS3107PR2G with circuit diagram manufactured by ON. The NTLTS3107PR2G is available in DFN-8 Package, is part of the IC Chips.

Features

Tape & Reel (TR) Package
MOSFET (Metal Oxide) Technology
Logic Level Gate FET Feature
20V Drain to Source Voltage (Vdss)
1.1A Current - Continuous Drain (Id) @ 25°C
250mOhm @ 1.5A, 4.5V Rds On (Max) @ Id, Vgs
1V @ 250µA Vgs(th) (Max) @ Id
3.5nC @ 4.5V Gate Charge (Qg) (Max) @ Vgs
160pF @ 10V Input Capacitance (Ciss) (Max) @ Vds
500mW Power - Max
Surface Mount Mounting Type