ON NTMD2C02R2SG

MOSFET (оксид металла)Затвор логического уровняN- и P-каналы20V5.2A, 3.4A43 мОм @ 4 А, 4,5 В1,2 В @ 250 мкА

Overview

The NTMD2C02R2 is MOSFET N/P-CH 20V 8SOIC, that includes Tape & Reel (TR) Packaging, they are designed to operate with a 8-SOIC (0.154", 3.90mm Width) Package Case, it has an Operating Temperature range of -55°C ~ 150°C (TJ), that offers Mounting Type features such as Surface Mount, Supplier Device Package is designed to work in 8-SOIC, as well as the N and P-Channel FET Type, the device can also be used as 2W Power Max. In addition, the Drain to Source Voltage Vdss is 20V, the device is offered in 1100pF @ 10V Input Capacitance Ciss Vds, the device has a Logic Level Gate of FET Feature, and Current Continuous Drain Id 25°C is 5.2A, 3.4A, and the Rds On Max Id Vgs is 43 mOhm @ 4A, 4.5V, and Vgs th Max Id is 1.2V @ 250μA, and the Gate Charge Qg Vgs is 20nC @ 4.5V.

The NT-MCX-G is CONN NUT FOR MCX AND MMCX CONN, that includes Nut Accessory Type, they are designed to operate with a Gold Body Finish, Color is shown on datasheet note for use in a Gold, that offers Connector Style features such as MCX, For Use With Related Products is designed to work in MCX and MMCX Connectors.

Features

Tape & Reel (TR) Package
MOSFET (Metal Oxide) Technology
Logic Level Gate FET Feature
20V Drain to Source Voltage (Vdss)
5.2A, 3.4A Current - Continuous Drain (Id) @ 25°C
43mOhm @ 4A, 4.5V Rds On (Max) @ Id, Vgs
1.2V @ 250µA Vgs(th) (Max) @ Id
20nC @ 4.5V Gate Charge (Qg) (Max) @ Vgs
1100pF @ 10V Input Capacitance (Ciss) (Max) @ Vds
2W Power - Max
Surface Mount Mounting Type