ON NTMD5836NLR2G

MOSFET (оксид металла)Затвор логического уровня2 N-канала (сдвоенные)40V9A, 5.7A12 мОм @ 10 А, 10 В3 В @ 250 мкА

Overview

The NTMD4N03R2G is MOSFET 2N-CH 30V 4A 8SOIC, that includes NTMD4N03 Series, they are designed to operate with a Digi-ReelR Alternate Packaging Packaging, Unit Weight is shown on datasheet note for use in a 0.006596 oz, that offers Mounting Style features such as SMD/SMT, Package Case is designed to work in 8-SOIC (0.154", 3.90mm Width), as well as the Si Technology, it has an Operating Temperature range of -55°C ~ 150°C (TJ). In addition, the Mounting Type is Surface Mount, the device is offered in 2 Channel Number of Channels, the device has a 8-SOIC of Supplier Device Package, and Configuration is Dual Dual Drain, and the FET Type is 2 N-Channel (Dual), and Power Max is 2W, and the Transistor Type is 2 N-Channel, and Drain to Source Voltage Vdss is 30V, and the Input Capacitance Ciss Vds is 400pF @ 20V, and FET Feature is Logic Level Gate, and the Current Continuous Drain Id 25°C is 4A, and Rds On Max Id Vgs is 60 mOhm @ 4A, 10V, and the Vgs th Max Id is 3V @ 250μA, and Gate Charge Qg Vgs is 16nC @ 10V, and the Pd Power Dissipation is 2 W, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and Fall Time is 10 ns, and the Rise Time is 14 ns, and Vgs Gate Source Voltage is 20 V, and the Id Continuous Drain Current is 4 A, and Vds Drain Source Breakdown Voltage is 30 V, and the Rds On Drain Source Resistance is 48 mOhms, and Transistor Polarity is N-Channel, and the Typical Turn Off Delay Time is 16 ns, and Typical Turn On Delay Time is 7 ns, and the Forward Transconductance Min is 6 S, and Channel Mode is Enhancement.

NTMD4N03R2 with circuit diagram manufactured by ON. The NTMD4N03R2 is available in SOP-8 Package, is part of the FETs - Arrays.

Features

Tape & Reel (TR) Package
MOSFET (Metal Oxide) Technology
Logic Level Gate FET Feature
40V Drain to Source Voltage (Vdss)
9A, 5.7A Current - Continuous Drain (Id) @ 25°C
12mOhm @ 10A, 10V Rds On (Max) @ Id, Vgs
3V @ 250µA Vgs(th) (Max) @ Id
50nC @ 10V Gate Charge (Qg) (Max) @ Vgs
2120pF @ 20V Input Capacitance (Ciss) (Max) @ Vds
1.5W Power - Max
Surface Mount Mounting Type