ON NTMD6601NR2G

MOSFET (оксид металла)Затвор логического уровня2 N-канала (сдвоенные)80V1.1A215 мОм @ 2,2A, 10 В3 В @ 250 мкА

Overview

The NTMD4N03R2G is MOSFET 2N-CH 30V 4A 8SOIC, that includes NTMD4N03 Series, they are designed to operate with a Digi-ReelR Alternate Packaging Packaging, Unit Weight is shown on datasheet note for use in a 0.006596 oz, that offers Mounting Style features such as SMD/SMT, Package Case is designed to work in 8-SOIC (0.154", 3.90mm Width), as well as the Si Technology, it has an Operating Temperature range of -55°C ~ 150°C (TJ). In addition, the Mounting Type is Surface Mount, the device is offered in 2 Channel Number of Channels, the device has a 8-SOIC of Supplier Device Package, and Configuration is Dual Dual Drain, and the FET Type is 2 N-Channel (Dual), and Power Max is 2W, and the Transistor Type is 2 N-Channel, and Drain to Source Voltage Vdss is 30V, and the Input Capacitance Ciss Vds is 400pF @ 20V, and FET Feature is Logic Level Gate, and the Current Continuous Drain Id 25°C is 4A, and Rds On Max Id Vgs is 60 mOhm @ 4A, 10V, and the Vgs th Max Id is 3V @ 250μA, and Gate Charge Qg Vgs is 16nC @ 10V, and the Pd Power Dissipation is 2 W, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and Fall Time is 10 ns, and the Rise Time is 14 ns, and Vgs Gate Source Voltage is 20 V, and the Id Continuous Drain Current is 4 A, and Vds Drain Source Breakdown Voltage is 30 V, and the Rds On Drain Source Resistance is 48 mOhms, and Transistor Polarity is N-Channel, and the Typical Turn Off Delay Time is 16 ns, and Typical Turn On Delay Time is 7 ns, and the Forward Transconductance Min is 6 S, and Channel Mode is Enhancement.

The NTMD5838NLR2G is MOSFET 2N-CH 40V 7.4A 8SOIC, that includes Dual Configuration, they are designed to operate with a 7.4A Current Continuous Drain Id 25°C, Drain to Source Voltage Vdss is shown on datasheet note for use in a 40V, that offers FET Feature features such as Logic Level Gate, FET Type is designed to work in 2 N-Channel (Dual), as well as the 17nC @ 10V Gate Charge Qg Vgs, the device can also be used as 7.4 A Id Continuous Drain Current. In addition, the Input Capacitance Ciss Vds is 785pF @ 20V, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and Mounting Type is Surface Mount, and the Mounting Style is SMD/SMT, and Number of Channels is 2 Channel, it has an Operating Temperature range of -55°C ~ 150°C (TJ), and Package Case is 8-SOIC (0.154", 3.90mm Width), and the Packaging is Digi-ReelR Alternate Packaging, and Pd Power Dissipation is 2.1 W, and the Power Max is 2.1W, and Rds On Drain Source Resistance is 25 mOhms, and the Rds On Max Id Vgs is 25 mOhm @ 7A, 10V, and Series is NTMD5838NL, and the Supplier Device Package is 8-SOIC, and Technology is Si, and the Transistor Polarity is N-Channel, and Transistor Type is 2 N-Channel, and the Unit Weight is 0.019048 oz, and Vds Drain Source Breakdown Voltage is 40 V, and the Vgs Gate Source Voltage is 20 V, and Vgs th Max Id is 3V @ 250μA.

Features

Tape & Reel (TR) Package
MOSFET (Metal Oxide) Technology
Logic Level Gate FET Feature
80V Drain to Source Voltage (Vdss)
1.1A Current - Continuous Drain (Id) @ 25°C
215mOhm @ 2.2A, 10V Rds On (Max) @ Id, Vgs
3V @ 250µA Vgs(th) (Max) @ Id
15nC @ 10V Gate Charge (Qg) (Max) @ Vgs
400pF @ 25V Input Capacitance (Ciss) (Max) @ Vds
600mW Power - Max
Surface Mount Mounting Type