ON NTMD6N04R2G

MOSFET (оксид металла)Затвор логического уровня2 N-канала (сдвоенные)40V4.6A34 мОм @ 5,8 А, 10 В3 В @ 250 мкА

Overview

The NTMD6N03R2G is MOSFET 2N-CH 30V 6A 8SOIC, that includes NTMD6N03 Series, they are designed to operate with a Digi-ReelR Alternate Packaging Packaging, Unit Weight is shown on datasheet note for use in a 0.006596 oz, that offers Mounting Style features such as SMD/SMT, Package Case is designed to work in 8-SOIC (0.154", 3.90mm Width), as well as the Si Technology, it has an Operating Temperature range of -55°C ~ 150°C (TJ). In addition, the Mounting Type is Surface Mount, the device is offered in 2 Channel Number of Channels, the device has a 8-SOIC of Supplier Device Package, and Configuration is Dual Dual Drain, and the FET Type is 2 N-Channel (Dual), and Power Max is 1.29W, and the Transistor Type is 2 N-Channel, and Drain to Source Voltage Vdss is 30V, and the Input Capacitance Ciss Vds is 950pF @ 24V, and FET Feature is Logic Level Gate, and the Current Continuous Drain Id 25°C is 6A, and Rds On Max Id Vgs is 32 mOhm @ 6A, 10V, and the Vgs th Max Id is 2.5V @ 250μA, and Gate Charge Qg Vgs is 30nC @ 10V, and the Pd Power Dissipation is 2 W, it has an Maximum Operating Temperature range of + 175 C, it has an Minimum Operating Temperature range of - 55 C, and Fall Time is 34 ns 45 ns, and the Rise Time is 27 ns 22 ns, and Vgs Gate Source Voltage is 20 V, and the Id Continuous Drain Current is 6 A, and Vds Drain Source Breakdown Voltage is 30 V, and the Rds On Drain Source Resistance is 32 mOhms, and Transistor Polarity is N-Channel, and the Typical Turn Off Delay Time is 22 ns 45 ns, and Typical Turn On Delay Time is 13 ns 9 ns, and the Forward Transconductance Min is 10 S, and Channel Mode is Enhancement.

NTMD6N03G with circuit diagram manufactured by ON. The NTMD6N03G is available in SOP-8 Package, is part of the IC Chips.

Features

Tape & Reel (TR) Package
MOSFET (Metal Oxide) Technology
Logic Level Gate FET Feature
40V Drain to Source Voltage (Vdss)
4.6A Current - Continuous Drain (Id) @ 25°C
34mOhm @ 5.8A, 10V Rds On (Max) @ Id, Vgs
3V @ 250µA Vgs(th) (Max) @ Id
30nC @ 10V Gate Charge (Qg) (Max) @ Vgs
900pF @ 32V Input Capacitance (Ciss) (Max) @ Vds
1.29W Power - Max
Surface Mount Mounting Type