ON NTMFD4C88NT1G

MOSFET (оксид металла)2 N-канальные (сдвоенные) асимметричные30V11.7A, 14.2A5,4 мОм @ 10 А, 10 В2,2 В @ 250 мкА

Overview

NTMFD4C20NT3G with pin details, that includes NTMFD4C20N Series, they are designed to operate with a Tape & Reel (TR) Alternate Packaging Packaging, Package Case is shown on datasheet note for use in a 8-PowerTDFN, that offers Technology features such as Si, it has an Operating Temperature range of -55°C ~ 150°C (TJ), as well as the Surface Mount Mounting Type, the device can also be used as 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical) Supplier Device Package. In addition, the FET Type is 2 N-Channel (Dual), the device is offered in 1.09W, 1.15W Power Max, the device has a 30V of Drain to Source Voltage Vdss, and Input Capacitance Ciss Vds is 970pF @ 15V, and the FET Feature is Standard, and Current Continuous Drain Id 25°C is 9.1A, 13.7A, and the Rds On Max Id Vgs is 7.3 mOhm @ 10A, 10V, and Vgs th Max Id is 2.1V @ 250μA, and the Gate Charge Qg Vgs is 9.3nC @ 4.5V.

NTMFD4C50NT3G with circuit diagram, that includes Reel Packaging, they are designed to operate with a NTMFD4C50N Series, Technology is shown on datasheet note for use in a Si.

Features

Tape & Reel (TR) Package
MOSFET (Metal Oxide) Technology
30V Drain to Source Voltage (Vdss)
11.7A, 14.2A Current - Continuous Drain (Id) @ 25°C
5.4mOhm @ 10A, 10V Rds On (Max) @ Id, Vgs
2.2V @ 250µA Vgs(th) (Max) @ Id
22.2nC @ 10V Gate Charge (Qg) (Max) @ Vgs
1252pF @ 15V Input Capacitance (Ciss) (Max) @ Vds
1.1W Power - Max
Surface Mount Mounting Type