ON NTP60N06L

N-канальный60 V60A (Ta)2 В @ 250 мкА2,4 Вт (Ta), 150 Вт (Tj)-55°C ~ 175°C (TJ)Сквозное отверстие

Overview

The NTP5864NG is MOSFET N-CH 60V 63A TO-220, that includes NTP5864N Series, they are designed to operate with a Tube Packaging, Unit Weight is shown on datasheet note for use in a 0.211644 oz, that offers Mounting Style features such as Through Hole, Package Case is designed to work in TO-220-3, as well as the Si Technology, the device can also be used as 1 Channel Number of Channels. In addition, the Configuration is Single, the device is offered in 1 N-Channel Transistor Type, the device has a 107 W of Pd Power Dissipation, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and Vgs Gate Source Voltage is 20 V, and the Id Continuous Drain Current is 63 A, and Vds Drain Source Breakdown Voltage is 60 V, and the Rds On Drain Source Resistance is 12.4 mOhms, and Transistor Polarity is N-Channel.

The NTP60N06G is MOSFET N-CH 60V 60A TO220AB manufactured by ON. The NTP60N06G is available in TO-220-3 Package, is part of the FETs - Single, , and with support for MOSFET N-CH 60V 60A TO220AB, N-Channel 60V 60A (Ta) 2.4W (Ta), 150W (Tj) Through Hole TO-220AB, Trans MOSFET N-CH 60V 60A 3-Pin(3+Tab) TO-220AB Tube.

Features

• Low RDS (on)

• Drain-to-source voltage of 60 V

• Supplied in the TO-220AB/D2PAK package

• Operating and storage temperature range of ?55 to 175 ??C

Applications

• Converters

• Power supplies

• Bridge circuits

• Power motor controls