ON NTTFD021N08C

MOSFET (оксид металла)2 N-канала (сдвоенные)80V6A (Ta), 24A (Tc)21 мОм @ 7,8 А, 10 В4 В @ 44 мкА

Overview

The NTTD1P02R2G is MOSFET 2P-CH 20V 1.45A 8MICRO, that includes Tape & Reel (TR) Packaging, they are designed to operate with a 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Package Case, it has an Operating Temperature range of -55°C ~ 150°C (TJ), that offers Mounting Type features such as Surface Mount, Supplier Device Package is designed to work in Micro8?, as well as the 2 P-Channel (Dual) FET Type, the device can also be used as 500mW Power Max. In addition, the Drain to Source Voltage Vdss is 20V, the device is offered in 265pF @ 16V Input Capacitance Ciss Vds, the device has a Logic Level Gate of FET Feature, and Current Continuous Drain Id 25°C is 1.45A, and the Rds On Max Id Vgs is 160 mOhm @ 1.45A, 4.5V, and Vgs th Max Id is 1.4V @ 250μA, and the Gate Charge Qg Vgs is 10nC @ 4.5V.

NTTF4821NTAG with EDA / CAD Models manufactured by ON. The NTTF4821NTAG is available in DFN8 Package, is part of the IC Chips.

Features

Tape & Reel (TR) Package
MOSFET (Metal Oxide) Technology
80V Drain to Source Voltage (Vdss)
6A (Ta), 24A (Tc) Current - Continuous Drain (Id) @ 25°C
21mOhm @ 7.8A, 10V Rds On (Max) @ Id, Vgs
4V @ 44µA Vgs(th) (Max) @ Id
8.4nC @ 10V Gate Charge (Qg) (Max) @ Vgs
572pF @ 40V Input Capacitance (Ciss) (Max) @ Vds
1.7W (Ta), 26W (Tc) Power - Max
Surface Mount Mounting Type