ON NVD5865NLT4G

N-канальный60 V10A (Ta), 46A (Tc)2 В @ 250 мкА3,1 Вт (Ta), 71 Вт (Tc)-55°C ~ 175°C (TJ)Поверхностный монтаж

Overview

The NVD5807NT4G is MOSFET N-CH 40V 23A DPAK, that includes NTD5807N Series, they are designed to operate with a Reel Packaging, Unit Weight is shown on datasheet note for use in a 0.139332 oz, that offers Mounting Style features such as SMD/SMT, Package Case is designed to work in TO-252-3, as well as the Si Technology, the device can also be used as 1 Channel Number of Channels. In addition, the Configuration is Single, the device is offered in 1 N-Channel Transistor Type, the device has a 33 W of Pd Power Dissipation, it has an Maximum Operating Temperature range of + 175 C, it has an Minimum Operating Temperature range of - 55 C, and Fall Time is 2 ns, and the Rise Time is 20.4 ns, and Vgs Gate Source Voltage is 20 V, and the Id Continuous Drain Current is 23 A, and Vds Drain Source Breakdown Voltage is 40 V, and the Rds On Drain Source Resistance is 20 mOhms, and Transistor Polarity is N-Channel, and the Qg Gate Charge is 12.6 nC, and Forward Transconductance Min is 8.1 S.

The NVD5862NT4G is MOSFET NFET 60V 98A 5.7MOHM, that includes 98 A Id Continuous Drain Current, they are designed to operate with a SMD/SMT Mounting Style, Package Case is shown on datasheet note for use in a TO-252-3, that offers Packaging features such as Reel, Rds On Drain Source Resistance is designed to work in 5.7 mOhms, as well as the NVD5862N Series, the device can also be used as Si Technology. In addition, the Transistor Polarity is N-Channel, the device is offered in 0.139332 oz Unit Weight, the device has a 60 V of Vds Drain Source Breakdown Voltage.

Features

• Low RDS(on)

• High current capability

• Fast switching speed

• Low conduction losses

• Available in the DPAK package

Applications

• Uninterruptible power supplies

• Synchronous rectification

• Switching applications