ON NVMFD5873NLWFT1G

MOSFET (оксид металла)Затвор логического уровня2 N-канала (сдвоенные)60V10A13 мОм @ 15 А, 10 В2,5 В @ 250 мкА

Overview

NVMFD5853NLWFT1G with pin details, that includes NVMFD5853NL Series, they are designed to operate with a Tape & Reel (TR) Packaging, Package Case is shown on datasheet note for use in a 8-PowerTDFN, that offers Technology features such as Si, it has an Operating Temperature range of -55°C ~ 175°C (TJ), as well as the Surface Mount Mounting Type, the device can also be used as 2 Channel Number of Channels. In addition, the Supplier Device Package is 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical), the device is offered in 2 N-Channel (Dual) FET Type, the device has a 3W of Power Max, and Transistor Type is 2 N-Channel, and the Drain to Source Voltage Vdss is 40V, and Input Capacitance Ciss Vds is 1100pF @ 25V, and the FET Feature is Logic Level Gate, and Current Continuous Drain Id 25°C is 12A, and the Rds On Max Id Vgs is 10 mOhm @ 15A, 10V, and Vgs th Max Id is 2.4V @ 250μA, and the Gate Charge Qg Vgs is 23nC @ 10V, and Transistor Polarity is N-Channel.

NVMFD5853NWFT1G with circuit diagram, that includes 12A Current Continuous Drain Id 25°C, they are designed to operate with a 40V Drain to Source Voltage Vdss, FET Feature is shown on datasheet note for use in a Logic Level Gate, that offers FET Type features such as 2 N-Channel (Dual), Gate Charge Qg Vgs is designed to work in 24nC @ 10V, as well as the 1225pF @ 25V Input Capacitance Ciss Vds, the device can also be used as Surface Mount Mounting Type, it has an Operating Temperature range of -55°C ~ 175°C (TJ), the device is offered in 8-PowerTDFN Package Case, the device has a Tape & Reel (TR) of Packaging, and Power Max is 3.1W, and the Rds On Max Id Vgs is 10 mOhm @ 15A, 10V, and Series is NVMFD5853N, and the Supplier Device Package is 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical), and Technology is Si, and the Vgs th Max Id is 4V @ 250μA.

Features

Tape & Reel (TR) Package
MOSFET (Metal Oxide) Technology
Logic Level Gate FET Feature
60V Drain to Source Voltage (Vdss)
10A Current - Continuous Drain (Id) @ 25°C
13mOhm @ 15A, 10V Rds On (Max) @ Id, Vgs
2.5V @ 250µA Vgs(th) (Max) @ Id
30.5nC @ 10V Gate Charge (Qg) (Max) @ Vgs
1560pF @ 25V Input Capacitance (Ciss) (Max) @ Vds
3.1W Power - Max
Surface Mount Mounting Type