ON P108718

30 V150 ОмК-226-3, К-92-3 (К-226АА)

Overview

The P1087 is JFET P-CH 30V 350MW TO92, that includes Bulk Packaging, they are designed to operate with a Through Hole Mounting Style, Package Case is shown on datasheet note for use in a TO-226-3, TO-92-3 (TO-226AA), that offers Technology features such as Si, Mounting Type is designed to work in Through Hole, as well as the TO-92-3 Supplier Device Package, the device can also be used as Single Configuration. In addition, the FET Type is P-Channel, the device is offered in 350mW Power Max, the device has a 30V of Voltage Breakdown V BRGSS, and Current Drain Idss Vds Vgs=0 is 5mA @ 20V, and the Voltage Cutoff VGS off Id is 5V @ 1μA, and Input Capacitance Ciss Vds is 45pF @ 15V, and the Resistance RDS On is 150 Ohm, and Pd Power Dissipation is 360 mW, and the Id Continuous Drain Current is - 3 mA, and Vds Drain Source Breakdown Voltage is - 15 V, and the Rds On Drain Source Resistance is 150 Ohms, and Transistor Polarity is P-Channel, and the Vgs Gate Source Breakdown Voltage is 30 V, and Gate Source Cutoff Voltage is 5 V.

P1087_J18Z with circuit diagram, that includes 5mA @ 20V Current Drain Idss Vds Vgs=0, they are designed to operate with a P-Channel FET Type, Input Capacitance Ciss Vds is shown on datasheet note for use in a 45pF @ 15V, that offers Mounting Type features such as Through Hole, Package Case is designed to work in TO-226-3, TO-92-3 (TO-226AA), as well as the Bulk Packaging, the device can also be used as 350mW Power Max. In addition, the Resistance RDS On is 150 Ohm, the device is offered in TO-92-3 Supplier Device Package, the device has a 30V of Voltage Breakdown V BRGSS, and Voltage Cutoff VGS off Id is 5V @ 1μA.

Features