ON PN5432

25 V5 ОмК-226-3, К-92-3 (К-226АА)

Overview

PN5432 / PN5433 / PN5434 PN5432 PN5433 PN5434 G S TO-92 D N-Channel Switch This device is designed for analog or digital switching applications where very low On Resistance is mandatory. Sourced from Process 58. See J108 for characteristics. Absolute Maximum Ratings- Symbol VDG VGS IGF TJ, Tstg Drain-Gate Voltage Gate-Source Voltage Forward Gate Current TA = 25°C unless otherwise noted Parameter Value 25 -25 10 -55 to +150 Units V V mA °C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RθJC RθJA TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max PN5432 / 5433 / 5434 350 2.8 125 357 Units mW mW/°C °C/W °C/W 2001 Fairchild Semiconductor Corporation PN5432/PN5433/PN5434, Rev B PN5432 / PN5433 / PN5434 N-Channel Switch (continued) Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)GSS IGSS ID(off) Gate-Source Breakdown Voltage Gate Reverse Current Drain Cutoff Leakage Voltage IG = 1.0 µ A, VDS = 0 VGS = 15 V, VDS = 0 VGS = 15 V, VDS = 0, TA = 150 °C VGS = 10 V, VDS = 5.0 V VGS = 10 V, VDS = 5.0 V, TA = 150 °C VDS = 5.0 V, ID = 3.0 nA 5432 5433 5434 -25 -200 -200 -200 -200 -10 -9.0 -4.0 V pA nA pA nA V V V VGS(off) Gate-Source Cutoff Voltage -4.0 -3.0 -1.0 ON CHARACTERISTICS IDSS Zero-Gate Voltage Drain Current- VDS = 15 V, VGS = 0 5432 5433 5434 5432 5433 5434 5432 5433 5434 5432 5433 5434 150 100 30 50 70 100 5.0 7.0 10 5.0 7.0 10 mA mA mA mV mV mV Ω Ω Ω Ω Ω Ω VDS(on) Drain-Source On Voltage ID = 10 mA, VGS = 0 rDS(on) Drain-Source On Resistance ID = 10 mA, VGS = 0 2.0 ID = 0, VGS = 0, f = 1.0 kHz 2.0 SMALL SIGNAL CHARACTERISTICS Ciss Crss Input Capacitance Reverse Transfer Capacitance VDS = 0 , VGS = 10 V, f = 1.0 MHz VDS = 0 , VGS = 10 V, f = 1.0 MHz 30 15 pF pF SWITCHING CHARACTERISTICS td tr ts Delay Time Rise Time Storage Time VDD = 1.5 V, VGS(on) = 0, ID(on) = 10 mA VGS(off) = 12 V, VDS(on) = 50 mV VDS(on) = 70 mV VDS(on) = 100 mV VGS(off) = 12 V 5432 5433 5434 4.0 1.0 6.0 6.0 6.0 30 ns ns ns ns ns ns tf Fall Time *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% TO-92 Tape and Reel Data TO-92 Packaging Configuration: Figure 1.0 TAPE and REEL OPTION FSCINT Label sample FAIRCHILD SEMICONDUCTOR CORPORATION LOT: CBVK741B019 HTB:B QTY: 10000 See Fig 2.0 for various Reeling Styles NSID: PN2222N SPEC: D/C1: D9842 SPEC REV: QA REV: B2 FSCINT Label (FSCINT) 5 Reels per Intermediate Box F63TNR Label Customi

Features

• Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 10V VGS

• Continuous Drain Current (ID): 10mA

• Drain to Source Resistance: 5Ohm

• Voltage - Cutoff (VGS off) @ Id: 4V @ 3nA

Applications

• General-purpose amplifier

• Switching applications

• Power management

• Industrial