ON SI9926DY

MOSFET (оксид металла)2 N-канала (сдвоенные)20V6,5A (Ta)30 мОм @ 6,5 А, 4,5 В1,5 В @ 250 мкА

Overview

The SI9926CDY-T1-GE3 is MOSFET 2N-CH 20V 8A 8-SOIC, that includes TrenchFETR Series, they are designed to operate with a Digi-ReelR Alternate Packaging Packaging, Part Aliases is shown on datasheet note for use in a SI9926CDY-GE3, that offers Unit Weight features such as 0.006596 oz, Mounting Style is designed to work in SMD/SMT, as well as the 8-SOIC (0.154", 3.90mm Width) Package Case, the device can also be used as Si Technology, it has an Operating Temperature range of -55°C ~ 150°C (TJ), the device is offered in Surface Mount Mounting Type, the device has a 2 Channel of Number of Channels, and Supplier Device Package is 8-SO, and the Configuration is Dual, and FET Type is 2 N-Channel (Dual), and the Power Max is 3.1W, and Transistor Type is 2 N-Channel, and the Drain to Source Voltage Vdss is 20V, and Input Capacitance Ciss Vds is 1200pF @ 10V, and the FET Feature is Logic Level Gate, and Current Continuous Drain Id 25°C is 8A, and the Rds On Max Id Vgs is 18 mOhm @ 8.3A, 4.5V, and Vgs th Max Id is 1.5V @ 250μA, and the Gate Charge Qg Vgs is 33nC @ 10V, and Pd Power Dissipation is 2 W, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and the Fall Time is 12 ns 10 ns, and Rise Time is 10 ns 12 ns, and the Vgs Gate Source Voltage is 12 V, and Id Continuous Drain Current is 8 A, and the Vds Drain Source Breakdown Voltage is 20 V, and Rds On Drain Source Resistance is 18 mOhms, and the Transistor Polarity is N-Channel, and Typical Turn Off Delay Time is 35 ns 25 ns, and the Typical Turn On Delay Time is 15 ns 10 ns, and Channel Mode is Enhancement.

SI9926CDY-T1 with circuit diagram manufactured by VISHAY. The SI9926CDY-T1 is available in SO-8 Package, is part of the FETs - Arrays.

Features

Bulk Package
MOSFET (Metal Oxide) Technology
20V Drain to Source Voltage (Vdss)
6.5A (Ta) Current - Continuous Drain (Id) @ 25°C
30mOhm @ 6.5A, 4.5V Rds On (Max) @ Id, Vgs
1.5V @ 250µA Vgs(th) (Max) @ Id
10nC @ 4.5V Gate Charge (Qg) (Max) @ Vgs
700pF @ 10V Input Capacitance (Ciss) (Max) @ Vds
900mW (Ta) Power - Max
Surface Mount Mounting Type