ON STB4N80ET4

Overview

The STB3NK60ZT4 is MOSFET N-CH 600V 2.4A D2PAK, that includes STB3NK60Z Series, they are designed to operate with a Reel Packaging, Unit Weight is shown on datasheet note for use in a 0.139332 oz, that offers Mounting Style features such as SMD/SMT, Package Case is designed to work in TO-252-3, as well as the Si Technology, the device can also be used as 1 Channel Number of Channels. In addition, the Configuration is Single, the device is offered in 1 N-Channel Transistor Type, the device has a 45 W of Pd Power Dissipation, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and Fall Time is 14 ns, and the Rise Time is 14 ns, and Vgs Gate Source Voltage is 30 V, and the Id Continuous Drain Current is 2.4 A, and Vds Drain Source Breakdown Voltage is 600 V, and the Rds On Drain Source Resistance is 3.6 Ohms, and Transistor Polarity is N-Channel, and the Typical Turn Off Delay Time is 19 ns, and Typical Turn On Delay Time is 9 ns, and the Forward Transconductance Min is 1.8 S, and Channel Mode is Enhancement.

STB3NK50ZT4 with EDA / CAD Models manufactured by IR. The STB3NK50ZT4 is available in SOT263 Package, is part of the IC Chips.

Features