Renesas 2SA1978-T1B-A

PNP12V5,5 ГГц

Overview

2SA1977-T1B-A with pin details, that includes Tape & Reel (TR) Packaging, they are designed to operate with a NE97733-T1B-A Part Aliases, Unit Weight is shown on datasheet note for use in a 0.050717 oz, that offers Mounting Style features such as SMD/SMT, Package Case is designed to work in TO-236-3, SC-59, SOT-23-3, as well as the Surface Mount Mounting Type, the device can also be used as SOT-23 Supplier Device Package. In addition, the Power Max is 200mW, the device is offered in PNP Transistor Type, the device has a 50mA of Current Collector Ic Max, and Voltage Collector Emitter Breakdown Max is 12V, and the DC Current Gain hFE Min Ic Vce is 20 @ 20mA, 8V, and Frequency Transition is 8.5GHz, and the Noise Figure dB Typ f is 1.5dB @ 1GHz, and Gain is 12dB.

2SA1978 with circuit diagram manufactured by NEC. The 2SA1978 is available in SOT-23 Package, is part of the RF Transistors (BJT).

Features

Bulk Package
PNP Transistor Type
12V Voltage - Collector Emitter Breakdown (Max)
5.5GHz Frequency - Transition
2dB @ 1GHz Noise Figure (dB Typ @ f)
10dB Gain
200mW Power - Max
20 @ 15mA, 10V DC Current Gain (hFE) (Min) @ Ic, Vce
50mA Current - Collector (Ic) (Max)
150°C (TJ) Operating Temperature
Surface Mount Mounting Type