Silicon Labs SI3474B-A01-IMR

Контроллер (PSE)90 W802.3at (PoE), 802.3bt

Overview

The SI3469DV-T1-E3 is MOSFET P-CH 20V 5A 6-TSOP, that includes TrenchFETR Series, they are designed to operate with a Digi-ReelR Alternate Packaging Packaging, Part Aliases is shown on datasheet note for use in a SI3469DV-E3, that offers Unit Weight features such as 0.000705 oz, Mounting Style is designed to work in SMD/SMT, as well as the TrenchFET Tradename, the device can also be used as SOT-23-6 Thin, TSOT-23-6 Package Case. In addition, the Technology is Si, it has an Operating Temperature range of -55°C ~ 150°C (TJ), the device has a Surface Mount of Mounting Type, and Number of Channels is 1 Channel, and the Supplier Device Package is 6-TSOP, and Configuration is Single, and the FET Type is MOSFET P-Channel, Metal Oxide, and Power Max is 1.14W, and the Transistor Type is 1 P-Channel, and Drain to Source Voltage Vdss is 20V, and the FET Feature is Standard, and Current Continuous Drain Id 25°C is 5A (Ta), and the Rds On Max Id Vgs is 30 mOhm @ 6.7A, 10V, and Vgs th Max Id is 3V @ 250μA, and the Gate Charge Qg Vgs is 30nC @ 10V, and Pd Power Dissipation is 1.14 W, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and the Fall Time is 12 ns, and Rise Time is 12 ns, and the Vgs Gate Source Voltage is 20 V, and Id Continuous Drain Current is 5 A, and the Vds Drain Source Breakdown Voltage is - 20 V, and Rds On Drain Source Resistance is 30 mOhms, and the Transistor Polarity is P-Channel, and Typical Turn Off Delay Time is 50 ns, and the Typical Turn On Delay Time is 10 ns, and Channel Mode is Enhancement.

SI3469DV-T1 with EDA / CAD Models manufactured by VISHAY. The SI3469DV-T1 is available in SOT163 Package, is part of the FETs - Single.

Features