Silicon Labs SI4060-B1B-FMR

142 МГц ~ 1,05 ГГц13 дБм

Overview

The SI4056DY-T1-GE3 is MOSFET N-CH 100V 11.1A 8SOIC, that includes TrenchFETR Series, they are designed to operate with a Digi-ReelR Alternate Packaging Packaging, Part Aliases is shown on datasheet note for use in a SI4056DY-GE3, that offers Unit Weight features such as 0.017870 oz, Mounting Style is designed to work in SMD/SMT, as well as the ThunderFET TrenchFET Tradename, the device can also be used as 8-SOIC (0.154", 3.90mm Width) Package Case. In addition, the Technology is Si, it has an Operating Temperature range of -55°C ~ 150°C (TJ), the device has a Surface Mount of Mounting Type, and Number of Channels is 1 Channel, and the Supplier Device Package is 8-SO, and Configuration is Single, and the FET Type is MOSFET N-Channel, Metal Oxide, and Power Max is 5.7W, and the Transistor Type is 1 N-Channel, and Drain to Source Voltage Vdss is 100V, and the Input Capacitance Ciss Vds is 900pF @ 50V, and FET Feature is Standard, and the Current Continuous Drain Id 25°C is 11.1A (Tc), and Rds On Max Id Vgs is 23 mOhm @ 15A, 10V, and the Vgs th Max Id is 2.8V @ 250μA, and Gate Charge Qg Vgs is 29.5nC @ 10V, and the Pd Power Dissipation is 5.7 W, and Id Continuous Drain Current is 11.1 A, and the Vds Drain Source Breakdown Voltage is 100 V, and Vgs th Gate Source Threshold Voltage is 2.8 V, and the Rds On Drain Source Resistance is 23 mOhms, and Transistor Polarity is N-Channel, and the Qg Gate Charge is 9.7 nC.

SI4056DY-T1-E3 with circuit diagram The SI4056DY-T1-E3 is available in SOP8 Package, is part of the IC Chips.

Features