Silicon Labs SI4122-EVB

СинтезаторSI4122

Overview

The SI4122DY-T1-GE3 is MOSFET N-CH 40V 27.2A 8-SOIC, that includes Reel Packaging, they are designed to operate with a SI4122DY-GE3 Part Aliases, Unit Weight is shown on datasheet note for use in a 0.006596 oz, that offers Mounting Style features such as SMD/SMT, Package Case is designed to work in SOIC-Narrow-8, as well as the Si Technology, the device can also be used as 1 Channel Number of Channels. In addition, the Configuration is Single Quad Drain Triple Source, the device is offered in 1 N-Channel Transistor Type, the device has a 3 W of Pd Power Dissipation, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and Fall Time is 28 ns, and the Rise Time is 34 ns, and Vgs Gate Source Voltage is 25 V, and the Id Continuous Drain Current is 19.2 A, and Vds Drain Source Breakdown Voltage is 40 V, and the Rds On Drain Source Resistance is 4.5 mOhms, and Transistor Polarity is N-Channel, and the Typical Turn Off Delay Time is 45 ns, and Typical Turn On Delay Time is 42 ns, and the Channel Mode is Enhancement.

SI4122DY-T1-E3 with circuit diagram manufactured by VISHAY. The SI4122DY-T1-E3 is available in SOP-8 Package, is part of the IC Chips.

Features