Silicon Labs SI4200-EVB

GPRS/GSM850 МГц, 900 МГц, 1,8 ГГцSi4200

Overview

The SI4200DY-T1-GE3 is MOSFET 2N-CH 25V 8A 8SOIC, that includes TrenchFETR Series, they are designed to operate with a Tape & Reel (TR) Packaging, Part Aliases is shown on datasheet note for use in a SI4200DY-GE3, that offers Unit Weight features such as 0.017870 oz, Mounting Style is designed to work in SMD/SMT, as well as the 8-SOIC (0.154", 3.90mm Width) Package Case, the device can also be used as Si Technology, it has an Operating Temperature range of -55°C ~ 150°C (TJ), the device is offered in Surface Mount Mounting Type, the device has a 2 Channel of Number of Channels, and Supplier Device Package is 8-SO, and the Configuration is Dual, and FET Type is 2 N-Channel (Dual), and the Power Max is 2.8W, and Transistor Type is 2 N-Channel, and the Drain to Source Voltage Vdss is 25V, and Input Capacitance Ciss Vds is 415pF @ 13V, and the FET Feature is Logic Level Gate, and Current Continuous Drain Id 25°C is 8A, and the Rds On Max Id Vgs is 25 mOhm @ 7.3A, 10V, and Vgs th Max Id is 2.2V @ 250μA, and the Gate Charge Qg Vgs is 12nC @ 10V, and Pd Power Dissipation is 2.8 W, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and the Vgs Gate Source Voltage is 16 V, and Id Continuous Drain Current is 8 A, and the Vds Drain Source Breakdown Voltage is 25 V, and Rds On Drain Source Resistance is 20 mOhms, and the Transistor Polarity is N-Channel.

SI4200DY-T1-E3 with circuit diagram manufactured by VISHAY. The SI4200DY-T1-E3 is available in SOP8 Package, is part of the IC Chips.

Features