Silicon Labs SI4300-E-BM

900 МГц, 1,8 ГГц

Overview

The SI4288DY-T1-GE3 is MOSFET 2N-CH 40V 9.2A 8SO, that includes TrenchFETR Series, they are designed to operate with a Digi-ReelR Alternate Packaging Packaging, Part Aliases is shown on datasheet note for use in a SI4288DY-GE3, that offers Unit Weight features such as 0.017870 oz, Mounting Style is designed to work in SMD/SMT, as well as the 8-SOIC (0.154", 3.90mm Width) Package Case, the device can also be used as Si Technology, it has an Operating Temperature range of -55°C ~ 150°C (TJ), the device is offered in Surface Mount Mounting Type, the device has a 2 Channel of Number of Channels, and Supplier Device Package is 8-SO, and the Configuration is Dual, and FET Type is 2 N-Channel (Dual), and the Power Max is 3.1W, and Transistor Type is 2 N-Channel, and the Drain to Source Voltage Vdss is 40V, and Input Capacitance Ciss Vds is 580pF @ 20V, and the FET Feature is Logic Level Gate, and Current Continuous Drain Id 25°C is 9.2A, and the Rds On Max Id Vgs is 20 mOhm @ 10A, 10V, and Vgs th Max Id is 2.5V @ 250μA, and the Gate Charge Qg Vgs is 15nC @ 10V, and Pd Power Dissipation is 3.1 W, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and the Vgs Gate Source Voltage is 20 V, and Id Continuous Drain Current is 9.2 A, and the Vds Drain Source Breakdown Voltage is 40 V, and Rds On Drain Source Resistance is 20 mOhms, and the Transistor Polarity is N-Channel.

SI4300BDY-T1-E3 with circuit diagram manufactured by VISHAY. The SI4300BDY-T1-E3 is available in SOIC-8 Package, is part of the IC Chips.

Features