Silicon Labs SI4688-A10-GM

76 МГц ~ 108 МГцFM

Overview

The SI4686DY-T1-GE3 is MOSFET N-CH 30V 18.2A 8-SOIC, that includes Reel Packaging, they are designed to operate with a SI4686DY-GE3 Part Aliases, Unit Weight is shown on datasheet note for use in a 0.006596 oz, that offers Mounting Style features such as SMD/SMT, Package Case is designed to work in SOIC-Narrow-8, as well as the Si Technology, the device can also be used as 1 Channel Number of Channels. In addition, the Configuration is Single, the device is offered in 1 N-Channel Transistor Type, the device has a 3 W of Pd Power Dissipation, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and Fall Time is 8 ns, and the Rise Time is 20 ns, and Vgs Gate Source Voltage is 20 V, and the Id Continuous Drain Current is 13.8 A, and Vds Drain Source Breakdown Voltage is 30 V, and the Rds On Drain Source Resistance is 9.5 mOhms, and Transistor Polarity is N-Channel, and the Typical Turn Off Delay Time is 20 ns, and Typical Turn On Delay Time is 20 ns, and the Channel Mode is Enhancement.

SI4686DY-TI-GE3 with circuit diagram manufactured by VISHAY. The SI4686DY-TI-GE3 is available in SOP8 Package, is part of the IC Chips.

Features

Applications

• Test Equipment
• Sensors
• GSM
• WCDMA
• TD-SCDMA
• Optical transmission devices
• Measuring for data transmission
• Radio communication equipment
• Measuring instruments
• Cellular infrastructure