Skyworks SI34071-A01-GM

Контроллер (PD), DC/DC71 W802.3at (PoE+), 802.3bt

Overview

The SI3477DV-T1-GE3 is MOSFET P-CH 12V 8A 6-TSOP, that includes TrenchFETR Series, they are designed to operate with a Digi-ReelR Alternate Packaging Packaging, Part Aliases is shown on datasheet note for use in a SI3477DV-GE3, that offers Unit Weight features such as 0.000705 oz, Mounting Style is designed to work in SMD/SMT, as well as the SOT-23-6 Thin, TSOT-23-6 Package Case, the device can also be used as Si Technology, it has an Operating Temperature range of -55°C ~ 150°C (TJ), the device is offered in Surface Mount Mounting Type, the device has a 1 Channel of Number of Channels, and Supplier Device Package is 6-TSOP, and the Configuration is Single Quad Drain, and FET Type is MOSFET P-Channel, Metal Oxide, and the Power Max is 4.2W, and Transistor Type is 1 P-Channel, and the Drain to Source Voltage Vdss is 12V, and Input Capacitance Ciss Vds is 2600pF @ 6V, and the FET Feature is Standard, and Current Continuous Drain Id 25°C is 8A (Tc), and the Rds On Max Id Vgs is 17.5 mOhm @ 9A, 4.5V, and Vgs th Max Id is 1V @ 250μA, and the Gate Charge Qg Vgs is 90nC @ 10V, and Pd Power Dissipation is 4.2 W, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and the Fall Time is 30 ns, and Rise Time is 10 ns, and the Vgs Gate Source Voltage is 10 V, and Id Continuous Drain Current is - 8 A, and the Vds Drain Source Breakdown Voltage is - 12 V, and Vgs th Gate Source Threshold Voltage is - 1 V, and the Rds On Drain Source Resistance is 17.5 mOhms, and Transistor Polarity is P-Channel, and the Typical Turn Off Delay Time is 65 nS, and Typical Turn On Delay Time is 10 nS, and the Qg Gate Charge is 28.3 nC, and Forward Transconductance Min is 30 S.

SI3477 with circuit diagram manufactured by SI. The SI3477 is available in SOT23-6 Package, is part of the FETs - Single.

Features