ST STM32F412CEU6

ARM® Cortex®-M4100 МГц512 КБ (512К x 8)

Overview

STM32F412xE/G devices are based on the high-performance Arm® Cortex® -M4 32-bit RISC core operating at a frequency of up to 100 MHz. Their Cortex®-M4 core features a Floating point unit (FPU) single precision which supports all Arm single-precision data-processing instructions and data types. It also implements a full set of DSP instructions and a memory protection unit (MPU) which enhances application security.

STM32F412xE/G devices belong to the STM32 Dynamic Efficiency? product line (with products combining power efficiency, performance and integration) while adding a new innovative feature called Batch Acquisition Mode (BAM) allowing even more power consumption saving during data batching. STM32F412xE/G devices incorporate high-speed embedded memories (up to 1 Mbyte of Flash memory, 256 Kbytes of SRAM), and an extensive range of enhanced I/Os and peripherals connected to two APB buses, three AHB buses and a 32-bit multi-AHB bus matrix. All devices offer one 12-bit ADC, a low-power RTC, twelve general-purpose 16-bit timers, two PWM timers for motor control and two general-purpose 32-bit timers. They also feature standard and advanced communication interfaces: In addition, STM32F412xE/G devices embed advanced peripherals: STM32F412xE/G devices are offered in 7 packages ranging from 48 to 144 pins. The set of available peripherals depends on the selected package. The STM32F412xE/G operates in the -40 to +125 °C temperature range from a 1.7 (PDR OFF) to 3.6 V power supply. A comprehensive set of power-saving modes allows the design of low-power applications. These features make the STM32F412xE/G microcontrollers suitable for a wide range of applications.

Features

? Dynamic Efficiency Line with BAM (Batch

Acquisition Mode)

? Core: Arm? 32-bit Cortex?-M4 CPU with FPU,

Adaptive real-time accelerator (ART

Accelerator?) allowing 0-wait state execution

from Flash memory, frequency up to 100 MHz,

memory protection unit,

125 DMIPS/1.25 DMIPS/MHz (Dhrystone 2.1),

and DSP instructions

? Memories

– Up to 1 Mbyte of Flash memory

– 256 Kbyte of SRAM

– Flexible external static memory controller

with up to 16-bit data bus: SRAM, PSRAM,

NOR Flash memory

– Dual mode Quad-SPI interface

? LCD parallel interface, 8080/6800 modes

? Clock, reset and supply management

– 1.7 V to 3.6 V application supply and I/Os

– POR, PDR, PVD and BOR

– 4-to-26 MHz crystal oscillator

– Internal 16 MHz factory-trimmed RC

– 32 kHz oscillator for RTC with calibration

– Internal 32 kHz RC with calibration

? Power consumption

– Run: 112 μA/MHz (peripheral off)

– Stop (Flash in Stop mode, fast wakeup

time): 50 μA Typ @ 25 °C; 75 μA max

@25 °C

– Stop (Flash in Deep power down mode,

slow wakeup time): down to 18 μA @

25 °C; 40 μA max @25 °C

– Standby: 2.4 μA @25 °C / 1.7 V without

RTC; 12 μA @85 °C @1.7 V

– VBAT supply for RTC: 1 μA @25 °C

? 1×12-bit, 2.4 MSPS ADC: up to 16 channels

? 2x digital filters for sigma delta modulator,

4x PDM interfaces, stereo microphone support

? General-purpose DMA: 16-stream DMA

Applications

? Motor drive and application control

? Medical equipment

? Industrial applications: PLC, inverters, circuit breakers

? Printers, and scanners

? Alarm systems, video intercom, and HVAC

? Home audio appliances

? Mobile phone sensor hub

? Wearable devices

? Connected objects

? Wifi modules