ST STSAFA110DFSPL02

Микросхема аутентификации, безопасный элемент IoTОткрытая панель 8-UFDFN

Overview

STS9P2UH7 with pin details, that includes P-channel STripFET Series, they are designed to operate with a Reel Packaging, Unit Weight is shown on datasheet note for use in a 0.017870 oz, that offers Mounting Style features such as SMD/SMT, Package Case is designed to work in SO-8, as well as the Si Technology, the device can also be used as 1 Channel Number of Channels. In addition, the Configuration is Single, the device is offered in 1 P-Channel Transistor Type, the device has a 2.7 W of Pd Power Dissipation, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and Fall Time is 84.5 ns, and the Rise Time is 30.5 ns, and Vgs Gate Source Voltage is 8 V, and the Id Continuous Drain Current is 9 A, and Vds Drain Source Breakdown Voltage is 20 V, and the Vgs th Gate Source Threshold Voltage is 400 mV, and Rds On Drain Source Resistance is 22.5 mOhms, and the Transistor Polarity is P-Channel, and Typical Turn Off Delay Time is 128 ns, and the Typical Turn On Delay Time is 12.5 ns, and Qg Gate Charge is 22 nC, and the Channel Mode is Enhancement.

The STS9NH3LL is MOSFET N-CH 30V 9A 8-SOIC manufactured by ST. The STS9NH3LL is available in 8-SOIC (0.154", 3.90mm Width) Package, is part of the FETs - Single, , and with support for MOSFET N-CH 30V 9A 8-SOIC, N-Channel 30V 9A (Tc) 2.5W (Tc) Surface Mount 8-SO, Trans MOSFET N-CH 30V 9A 8-Pin SO N T/R.

Features