Vishay Semiconductor Opto Division BPW85B

850 нм50°Сквозное отверстие

Overview

The BPW85 is PHOTOTRANSISTOR NPN 3MM CLEAR, that includes Phototransistors Product, they are designed to operate with a Phototransistor Type, Packaging is shown on datasheet note for use in a Bulk, that offers Package Case features such as Radial, it has an Operating Temperature range of -40°C ~ 100°C (TA), as well as the Through Hole Mounting Type, the device can also be used as 150mW Power Max. In addition, the Current Collector Ic Max is 50mA, the device is offered in 70V Voltage Collector Emitter Breakdown Max, the device has a Top View of Orientation, and Wavelength is 850nm, and the Current Dark Id Max is 200nA, and Viewing Angle is 50°, and the Pd Power Dissipation is 100 mW, it has an Maximum Operating Temperature range of + 100 C, it has an Minimum Operating Temperature range of - 40 C, and Collector Emitter Voltage VCEO Max is 70 V, and the Fall Time is 2.3 us, and Rise Time is 2 us, and the Collector Emitter Saturation Voltage is 0.3 V, and Dark Current is 200 nA, and the Maximum On State Collector Current is 50 mA, and Collector Emitter Breakdown Voltage is 70 V, and the Light Current is 0.8 mA.

The BPW83 is PHOTODIODE PIN FLAT SIDE VIEW, that includes 2 nA Dark Current, they are designed to operate with a 100 ns Fall Time, Half Intensity Angle Degrees is shown on datasheet note for use in a 65 deg, it has an Maximum Operating Temperature range of + 100 C, it has an Minimum Operating Temperature range of - 40 C, as well as the Through Hole Mounting Style, the device can also be used as 4E-14 W/sqrt Hz Noise Equivalent Power NEP. In addition, the Packaging is Bulk, the device is offered in 215 mW Pd Power Dissipation, the device has a 950 nm of Peak Wavelength, and Photocurrent is 45 uA, and the Product is PIN Photodiodes, and Rise Time is 100 ns, and the Vr Reverse Voltage is 60 V.

Features