Vishay Siliconix 2N4118A

40 VTO-206AF, TO-72-4 Металлическая банка

Overview

The 2N4117A is MOSFET N-CH 40V 30UA TO-206AF, that includes Bulk Packaging, they are designed to operate with a Through Hole Mounting Style, Package Case is shown on datasheet note for use in a TO-206AF, TO-72-4 Metal Can, that offers Technology features such as Si, Mounting Type is designed to work in Through Hole, as well as the TO-206AF (TO-72) Supplier Device Package, the device can also be used as Single Configuration. In addition, the FET Type is N-Channel, the device is offered in 300mW Power Max, the device has a 40V of Voltage Breakdown V BRGSS, and Current Drain Idss Vds Vgs=0 is 30μA @ 10V, and the Voltage Cutoff VGS off Id is 600mV @ 1nA, and Input Capacitance Ciss Vds is 3pF @ 10V, and the Pd Power Dissipation is 300 mW, and Id Continuous Drain Current is 1 nA, and the Vds Drain Source Breakdown Voltage is 10 V, and Transistor Polarity is N-Channel, and the Forward Transconductance Min is 70 uS, and Vgs Gate Source Breakdown Voltage is - 40 V, and the Gate Source Cutoff Voltage is - 1.8 V.

2N4117A-2 with circuit diagram, that includes Single Configuration, they are designed to operate with a 30μA @ 10V Current Drain Idss Vds Vgs=0, FET Type is shown on datasheet note for use in a N-Channel, that offers Input Capacitance Ciss Vds features such as 3pF @ 10V, Mounting Type is designed to work in Through Hole, as well as the SMD/SMT Mounting Style, the device can also be used as TO-206AF, TO-72-4 Metal Can Package Case. In addition, the Packaging is Bulk, the device is offered in 300mW Power Max, the device has a TO-206AF (TO-72) of Supplier Device Package, and Transistor Polarity is N-Channel, and the Vgs Gate Source Breakdown Voltage is - 40 V, and Voltage Breakdown V BRGSS is 40V, and the Voltage Cutoff VGS off Id is 600mV @ 1nA.

Features