Vishay Siliconix 2N4339-E3

50 VTO-206AA, TO-18-3 Металлическая банка

Overview

The 2N4339 is MOSFET N-CH 50V 1.5MA TO-206AA, that includes Bulk Packaging, they are designed to operate with a Through Hole Mounting Style, Package Case is shown on datasheet note for use in a TO-206AA, TO-18-3 Metal Can, that offers Technology features such as Si, Mounting Type is designed to work in Through Hole, as well as the TO-206AA (TO-18) Supplier Device Package, the device can also be used as Single Configuration. In addition, the FET Type is N-Channel, the device is offered in 300mW Power Max, the device has a 50V of Voltage Breakdown V BRGSS, and Current Drain Idss Vds Vgs=0 is 500μA @ 15V, and the Voltage Cutoff VGS off Id is 600mV @ 100nA, and Input Capacitance Ciss Vds is 7pF @ 15V, and the Pd Power Dissipation is 300 mW, and Id Continuous Drain Current is 100 pA, and the Vds Drain Source Breakdown Voltage is 15 V, and Rds On Drain Source Resistance is 1.7 kOhms, and the Transistor Polarity is N-Channel, and Forward Transconductance Min is 800 uS, and the Vgs Gate Source Breakdown Voltage is - 50 V, and Gate Source Cutoff Voltage is - 1.8 V.

The 2N4339-2 is MOSFET N-CH 50V 1.5MA TO-206AA, that includes Single Configuration, they are designed to operate with a 500μA @ 15V Current Drain Idss Vds Vgs=0, FET Type is shown on datasheet note for use in a N-Channel, that offers Input Capacitance Ciss Vds features such as 7pF @ 15V, Mounting Type is designed to work in Through Hole, as well as the SMD/SMT Mounting Style, the device can also be used as TO-206AA, TO-18-3 Metal Can Package Case. In addition, the Packaging is Bulk, the device is offered in 300mW Power Max, the device has a TO-206AA (TO-18) of Supplier Device Package, and Transistor Polarity is N-Channel, and the Vgs Gate Source Breakdown Voltage is - 50 V, and Voltage Breakdown V BRGSS is 50V, and the Voltage Cutoff VGS off Id is 600mV @ 100nA.

Features