Vishay Siliconix 2N4856JTXV02

TO-206AA, TO-18-3 Металлическая банка

Overview

The 2N4856A is JFET Leaded JFET, that includes 2N4856 Series, they are designed to operate with a Bulk Packaging, Part Aliases is shown on datasheet note for use in a BK, that offers Mounting Style features such as Through Hole, Package Case is designed to work in TO-18, as well as the Si Technology, the device can also be used as Single Configuration. In addition, the Pd Power Dissipation is 360 mW, it has an Maximum Operating Temperature range of + 200 C, it has an Minimum Operating Temperature range of - 65 C, and Id Continuous Drain Current is 500 pA, and the Vds Drain Source Breakdown Voltage is 40 V, and Rds On Drain Source Resistance is 25 Ohms, and the Transistor Polarity is N-Channel, and Vgs Gate Source Breakdown Voltage is 40 V, and the Drain to Source Voltage Vdss is 50 mA, and Gate Source Cutoff Voltage is 4 V, and the Maximum Drain Gate Voltage is 40 V.

The 2N4856 is JFET JFET N-Channel, that includes Single Configuration, they are designed to operate with a 50 mA Drain to Source Voltage Vdss, Gate Source Cutoff Voltage is shown on datasheet note for use in a - 10 V, that offers Id Continuous Drain Current features such as 500 pA, Mounting Style is designed to work in Through Hole, as well as the TO-18-3 Package Case, the device can also be used as Reel Packaging. In addition, the Pd Power Dissipation is 1.8 W, the device is offered in 25 Ohms Rds On Drain Source Resistance, the device has a Si of Technology, and Transistor Polarity is N-Channel, and the Vds Drain Source Breakdown Voltage is 15 V, and Vgs Gate Source Breakdown Voltage is - 40 V.

Features