Vishay Siliconix 2N4857JTX02

TO-206AA, TO-18-3 Металлическая банка

Overview

The 2N4857A is JFET Leaded JFET, that includes 2N4857 Series, they are designed to operate with a Bulk Packaging, Mounting Style is shown on datasheet note for use in a Through Hole, that offers Package Case features such as TO-18, Configuration is designed to work in Single, as well as the 360 mW Pd Power Dissipation, it has an Maximum Operating Temperature range of + 200 C, it has an Minimum Operating Temperature range of - 65 C, the device is offered in 40 V Vds Drain Source Breakdown Voltage, the device has a 40 Ohms of Rds On Drain Source Resistance, and Transistor Polarity is N-Channel, and the Vgs Gate Source Breakdown Voltage is 40 V, and Drain to Source Voltage Vdss is 20 mA to 100 mA, and the Gate Source Cutoff Voltage is 2 V to 6 V, and Maximum Drain Gate Voltage is 40 V.

The 2N4857 is JFET JFET N-Channel, that includes Single Configuration, they are designed to operate with a 100 mA Drain to Source Voltage Vdss, Gate Source Cutoff Voltage is shown on datasheet note for use in a - 6 V, that offers Id Continuous Drain Current features such as 500 pA, Mounting Style is designed to work in Through Hole, as well as the TO-18-3 Package Case, the device can also be used as Reel Packaging. In addition, the Pd Power Dissipation is 1.8 W, the device is offered in 40 Ohms Rds On Drain Source Resistance, the device has a Si of Technology, and Transistor Polarity is N-Channel, and the Vds Drain Source Breakdown Voltage is 15 V, and Vgs Gate Source Breakdown Voltage is - 40 V.

Features