Infineon 6ED003L06F2XUMA1

Полумост613 В ~ 17,5 В

Overview

3-phase 600V MOSFET and IGBT gate driver ICs from Infineon based on proven existing SOI-technology. The absence of parasitic thyristor structures in these rugged devices prevents latch-up under all normal operating conditions. The drivers include under-voltage over-current detection and can be controlled by CMOS or LSTTL compatible signals down to 3.3V.

Maximum blocking voltage 600VSix independent driversControl via 3.3V logicUnder-voltage detection with hysteresisOver-current detection

Features

EiceDriver™ Series
Embedded in the Tape & Reel (TR) package
6 drivers
Employing a gate type of IGBT, N-Channel, P-Channel MOSFET
28 pins
High-side voltage - Max (Bootstrap) of 620V
Operating with the supply voltage of EiceDriver™

Surface Mount Mounting Type

Applications

There are a lot of Infineon Technologies
6ED003L06F2XUMA1 gate drivers applications.

• High-speed communications
• RGB applications
• Broadcast equipment
• Active filtering
• Head-up and Head mounted displays
• High current laser/LED systems
• LCD/LCoS/DLP portable and embedded pico projectors
• Multicolor LED/laser displays
• Smart Phones
• Portable Navigation Devices