Infineon 6EDL04I06PTXUMA1

Полумост613 В ~ 17,5 В

Overview

3-phase 600V MOSFET and IGBT gate driver ICs from Infineon based on proven existing SOI-technology. The absence of parasitic thyristor structures in these rugged devices prevents latch-up under all normal operating conditions. The drivers include under-voltage over-current detection and can be controlled by CMOS or LSTTL compatible signals down to 3.3V.

Maximum blocking voltage 600VSix independent driversControl via 3.3V logicUnder-voltage detection with hysteresisOver-current detection

Features

• Embedded in the Tape & Reel (TR) package

• 6 drivers

• Employing a gate type of IGBT, N-Channel, P-Channel MOSFET

• 28 pins

• High-side voltage - Max (Bootstrap) of 600V

• Maximum power dissipation of 1.3W

• Operating with the supply voltage of EiceDriver?

Applications

There are a lot of Infineon Technologies 6EDL04I06PTXUMA1 gate drivers applications.

• serial peripheral interface (SPI), I2C

• Digitally controlled power supplies

• Motor Drives

• Industrial motor drives - compact, standard, premium, servo drives

• High power buffers

• Solar power supplies

• AC-DC Inverters

• Active filtering

• Portable computers

• RGB applications