Infineon AUIRFN8459TR

MOSFET (оксид металла)2 N-канала (сдвоенные)40V50A5,9 мОм при 40 А, 10 В3,9 В @ 50 мкА

Overview

The AUIRFN8403TR is MOSFET Automotive HEXFET COOLiRFET, that includes Reel Packaging, they are designed to operate with a SMD/SMT Mounting Style, Package Case is shown on datasheet note for use in a PQFN-8, that offers Technology features such as Si, Number of Channels is designed to work in 1 Channel, as well as the Single Configuration, the device can also be used as 1 N-Channel Transistor Type. In addition, the Pd Power Dissipation is 4.3 W, it has an Maximum Operating Temperature range of + 175 C, it has an Minimum Operating Temperature range of - 55C, and Fall Time is 26 ns, and the Rise Time is 37 ns, and Vgs Gate Source Voltage is 20 V, and the Id Continuous Drain Current is 95 A, and Vds Drain Source Breakdown Voltage is 40 V, and the Vgs th Gate Source Threshold Voltage is 3.9 V, and Rds On Drain Source Resistance is 3.3 mOhms, and the Transistor Polarity is N-Channel, and Typical Turn Off Delay Time is 33 ns, and the Typical Turn On Delay Time is 11 ns, and Qg Gate Charge is 65 nC, and the Forward Transconductance Min is 159 S, and Channel Mode is Enhancement.

AUIRFN8405TR with circuit diagram, that includes Reel Packaging, they are designed to operate with a Si Technology.

Features

?¤ Advanced Process Technology

?¤ Dual N-Channel MOSFET

?¤ Ultra Low On-Resistance

?¤ 175??C Operating Temperature

?¤ Fast Switching

?¤ Repetitive Avalanche Allowed up to Tjmax

?¤ Lead-Free, RoHS Compliant

?¤ Automotive Qualified *

Applications

?¤ 12V Automotive Systems

?¤ Brushed DC Motor

?¤ Braking

?¤ Transmission