Infineon BFP840ESDH6327XTSA1

NPN2.25V80 ГГц

Overview

A range of ultra-low-noise wideband NPN bipolar RF transistors from Infineon. These hetero-junction bipolar devices utilize Infineon’s silicon germanium carbon (SiGe:C) material technology and are especially suited for use mobile applications in which low power consumption is a key requirement. With typical transition frequencies of up to 65 GHz these devices offer high power gain at frequencies of up to 10 GHz when used in amplifier applications. The transistors include internal circuitry for ESD and excessive RF input power protection.

Features

Tape & Reel (TR) Package
NPN Transistor Type
2.25V Voltage - Collector Emitter Breakdown (Max)
80GHz Frequency - Transition
0.85dB @ 5.5GHz Noise Figure (dB Typ @ f)
18.5dB Gain
75mW Power - Max
150 @ 10mA, 1.8V DC Current Gain (hFE) (Min) @ Ic, Vce
35mA Current - Collector (Ic) (Max)
150°C (TJ) Operating Temperature
Surface Mount Mounting Type