Infineon BGAU1A10E6327XTSA1

5,15 ГГц ~ 5,925 ГГц-1 дБм1,7 дБ ~ 6,5 дБ1,7 В ~ 1,9 В

Overview

The BG 3130R H6327 is RF MOSFET Transistors RF MOSFETS, that includes BG3130 Series, they are designed to operate with a RF Small Signal MOSFET Type, Packaging is shown on datasheet note for use in a Reel, that offers Part Aliases features such as BG3130RH6327XT BG3130RH6327XTSA1 SP000753496, Unit Weight is designed to work in 0.000212 oz, as well as the SMD/SMT Mounting Style, the device can also be used as SOT-363 Package Case. In addition, the Technology is Si, the device is offered in 24 dB Gain, the device has a 200 mW of Pd Power Dissipation, it has an Maximum Operating Temperature range of + 150 C, and the Operating Frequency is 800 MHz, and Vgs Gate Source Voltage is 6 V, and the Id Continuous Drain Current is 25 mA, and Vds Drain Source Breakdown Voltage is 12 V, and the Transistor Polarity is N-Channel.

BG with EDA / CAD Models manufactured by VISHAY. The BG is available in SMA Package, is part of the IC Chips.

Features