Infineon BGS14M8U9E6327XUSA1

Overview

The BGS12AL7-4E6327 General Purpose RF MOS switch is designed to cover a broad range of applications from 30 MHz to 3 GHz. The symmetric design of its single pole double throw configuration offers high design flexibility. This single supply chip integrates on-chip CMOS logic driven by a simple, single-pin CMOS or TTL compatible control input signal. The 0.1 dB compression point exceeds the switch’s maximum input power level of 21 dBm, resulting in linear performance at all signal levels. The RF switch has a very low insertion loss of 0.4 dB in the 1 GHz and 0.5 dB in the 2 GHz range. Unlike GaAs technology, external DC blocking capacitors at the RF ports are only required if DC voltage is applied externally.

Features