Infineon BSC150N03LD

MOSFET (оксид металла)Затвор логического уровня2 N-канала (сдвоенные)30V8A15 мОм @ 20 А, 10 В2,2 В @ 250 мкА

Overview

The BSC12DN20NS3 G is MOSFET N-Ch 200V 11.3A TDSON-8 OptiMOS 3, that includes BSC12DN20 Series, they are designed to operate with a Reel Packaging, Part Aliases is shown on datasheet note for use in a BSC12DN20NS3GATMA1 BSC12DN20NS3GXT SP000781774, that offers Mounting Style features such as SMD/SMT, Package Case is designed to work in TDSON-8, as well as the Si Technology, the device can also be used as 1 Channel Number of Channels. In addition, the Configuration is Single, the device is offered in 1 N-Channel Transistor Type, the device has a 50 W of Pd Power Dissipation, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and Fall Time is 3 ns, and the Rise Time is 4 ns, and Vgs Gate Source Voltage is +/- 20 V, and the Id Continuous Drain Current is 11.3 A, and Vds Drain Source Breakdown Voltage is 200 V, and the Vgs th Gate Source Threshold Voltage is 3 V, and Rds On Drain Source Resistance is 125 mOhms, and the Transistor Polarity is N-Channel, and Typical Turn Off Delay Time is 10 ns, and the Typical Turn On Delay Time is 6 ns, and Qg Gate Charge is 6.5 nC, and the Forward Transconductance Min is 12 S, and Channel Mode is Enhancement.

The BSC12DN20NS3G is MOSFET N-Ch 200V 11.3A TDSON-8 OptiMOS 3, that includes 12 S 6 S Forward Transconductance Min, they are designed to operate with a 11.3 A Id Continuous Drain Current, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, Mounting Style is designed to work in SMD/SMT, as well as the 1 Channel Number of Channels, the device can also be used as TDSON-8 Package Case. In addition, the Packaging is Reel, the device is offered in BSC12DN20NS3GATMA1 SP000781774 Part Aliases, the device has a 50 W of Pd Power Dissipation, and Rds On Drain Source Resistance is 108 mOhms, and the Series is OptiMOS 3, and Technology is Si, and the Tradename is OptiMOS, and Transistor Polarity is N-Channel, and the Transistor Type is 1 N-Channel, and Vds Drain Source Breakdown Voltage is 200 V, and the Vgs Gate Source Voltage is 20 V.

Features

OptiMOS™3 Series
Bulk Package
MOSFET (Metal Oxide) Technology
Logic Level Gate FET Feature
30V Drain to Source Voltage (Vdss)
8A Current - Continuous Drain (Id) @ 25°C
15mOhm @ 20A, 10V Rds On (Max) @ Id, Vgs
2.2V @ 250µA Vgs(th) (Max) @ Id
6.4nC @ 10V Gate Charge (Qg) (Max) @ Vgs
1100pF @ 15V Input Capacitance (Ciss) (Max) @ Vds
26W Power - Max
Surface Mount Mounting Type