Infineon BSO150N03

MOSFET (оксид металла)2 N-канала (сдвоенные)30V7.6A15 мОм @ 9,1 А, 10 В2 В @ 25 мкА

Overview

The BSO130P03S H is MOSFET P-Ch -30V -11.3A DSO-8 OptiMOS P, that includes OptiMOS P Series, they are designed to operate with a Reel Packaging, Part Aliases is shown on datasheet note for use in a BSO130P03SHXT BSO130P03SHXUMA1 SP000613860, that offers Mounting Style features such as SMD/SMT, Tradename is designed to work in OptiMOS, as well as the DSO-8 Package Case, the device can also be used as Si Technology. In addition, the Number of Channels is 1 Channel, the device is offered in Single Configuration, the device has a 1 P-Channel of Transistor Type, and Pd Power Dissipation is 2.36 W, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and the Fall Time is 62 ns, and Rise Time is 16 ns, and the Vgs Gate Source Voltage is 25 V, and Id Continuous Drain Current is - 11.3 A, and the Vds Drain Source Breakdown Voltage is - 30 V, and Rds On Drain Source Resistance is 13 mOhms, and the Transistor Polarity is P-Channel, and Typical Turn Off Delay Time is 70 ns, and the Typical Turn On Delay Time is 13 ns, and Qg Gate Charge is - 61 nC, and the Forward Transconductance Min is 27 S, and Channel Mode is Enhancement.

BSO130PO3SH with circuit diagram manufactured by INFINEON. The BSO130PO3SH is available in SOP-8 Package, is part of the IC Chips.

Features

? Technology that has been optimized for laptop DC/DC converters

? J EDEC1) qualified for the intended uses

? N-channelz

? Logic degree

? Fantastic gate charge x R DS(on)product (FOM)

? Extremely low RDS resistance (on)

Applications

Switching applications