Infineon BSO215C

MOSFET (оксид металла)Затвор логического уровняN- и P-каналы20V3.7A100 мОм @ 3,7 А, 10 В2 В @ 10 мкА

Overview

The BSO211PHXUMA1 is MOSFET 2P-CH 20V 4A 8DSO, that includes OptiMOS? Series, they are designed to operate with a Tape & Reel (TR) Packaging, Part Aliases is shown on datasheet note for use in a BSO211P H SP000613844, that offers Package Case features such as 8-SOIC (0.154", 3.90mm Width), Technology is designed to work in Si, it has an Operating Temperature range of -55°C ~ 150°C (TJ), the device can also be used as Surface Mount Mounting Type. In addition, the Number of Channels is 2 Channel, the device is offered in PG-DSO-8 Supplier Device Package, the device has a 2 P-Channel (Dual) of FET Type, and Power Max is 1.6W, and the Transistor Type is 2 P-Channel, and Drain to Source Voltage Vdss is 20V, and the Input Capacitance Ciss Vds is 1095pF @ 15V, and FET Feature is Logic Level Gate, and the Current Continuous Drain Id 25°C is 4A, and Rds On Max Id Vgs is 67 mOhm @ 4.6A, 4.5V, and the Vgs th Max Id is 1.2V @ 25μA, and Gate Charge Qg Vgs is 10nC @ 4.5V, and the Transistor Polarity is P-Channel.

BSO211P/211P/LOC211P with circuit diagram manufactured by INF. The BSO211P/211P/LOC211P is available in SOP8 Package, is part of the IC Chips.

Features

SIPMOS® Series
Tape & Reel (TR) Package
MOSFET (Metal Oxide) Technology
Logic Level Gate FET Feature
20V Drain to Source Voltage (Vdss)
3.7A Current - Continuous Drain (Id) @ 25°C
100mOhm @ 3.7A, 10V Rds On (Max) @ Id, Vgs
2V @ 10µA Vgs(th) (Max) @ Id
11.5nC @ 10V Gate Charge (Qg) (Max) @ Vgs
246pF @ 25V Input Capacitance (Ciss) (Max) @ Vds
2W Power - Max
Surface Mount Mounting Type