Infineon FS50R07W1E3B11ABOMA1

Overview

FS50R07W1E3_B11A with pin details, that includes FS50R07W1 Series, they are designed to operate with a IGBT Silicon Modules Product, Part Aliases is shown on datasheet note for use in a SP000865118, that offers Mounting Style features such as Through Hole, Package Case is designed to work in EasyPack1B, as well as the Single Configuration, the device can also be used as 205 W Pd Power Dissipation, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 40 C, the device has a 650 V of Collector Emitter Voltage VCEO Max, and Collector Emitter Saturation Voltage is 1.7 V, and the Continuous Collector Current at 25 C is 70 A, and Gate Emitter Leakage Current is 400 nA, and the Maximum Gate Emitter Voltage is +/- 20 V.

The FS50R07N2E4 is IGBT Modules IGBT Module 50A 650V manufactured by Infineon. is part of the IGBTs - Modules, , and with support for IGBT Modules IGBT Module 50A 650V.

Features