Infineon FS55MR12W1M1HB11NPSA1

Карбид кремния (SiC)6 N-канальный (полный мост)1200V15A (Tj)79 мОм при 15 А, 18 В5,15 В @ 6 мА

Overview

F4214IN BK107 with pin details, that includes Black Color, they are designed to operate with a Polyolefin (PO), Irradiated Material, Series is shown on datasheet note for use in a FITR-421, that offers Type features such as Tubing, Flexible, Length is designed to work in 4.00' (1.22m), it has an Operating Temperature range of -55°C ~ 135°C, the device can also be used as Flame Retardant, Fluid Resistant, Heat Resistant, UV Resistant Features. In addition, the Shrinkage Ratio is 4 to 1, the device is offered in 4.000" (101.6mm) Inner Diameter Supplied, the device has a 1.050" (26.7mm) of Inner Diameter Recovered, and Recovered Wall Thickness is 0.045" (1.14mm), and the Shrink Temperature is 90°C.

F422 with EDA / CAD Models manufactured by NM/NM. The F422 is available in T092 Package, is part of the IC Chips.

Features

EasyPACK™, CoolSiC™ Series
Tray Package
Silicon Carbide (SiC) Technology
1200V Drain to Source Voltage (Vdss)
15A (Tj) Current - Continuous Drain (Id) @ 25°C
79mOhm @ 15A, 18V Rds On (Max) @ Id, Vgs
5.15V @ 6mA Vgs(th) (Max) @ Id
45nC @ 18V Gate Charge (Qg) (Max) @ Vgs
1350pF @ 800V Input Capacitance (Ciss) (Max) @ Vds
20mW Power - Max
Chassis Mount Mounting Type
Module Package / Case