Infineon IDH06S60C

SiC (карбид кремния) Шоттки600 V6A

Overview

The IDH06G65C5 is DIODE SCHOTTKY 650V 6A TO220-2, that includes thinQ!? Series, they are designed to operate with a Tube Packaging, Part Aliases is shown on datasheet note for use in a IDH06G65C5XK IDH06G65C5XKSA1 SP000925202, that offers Unit Weight features such as 0.211644 oz, Mounting Style is designed to work in Through Hole, as well as the TO-220-2 Package Case, the device can also be used as Through Hole Mounting Type. In addition, the Supplier Device Package is PG-TO220-2, the device is offered in No Recovery Time > 500mA (Io) Speed, the device has a Silicon Carbide Schottky of Diode Type, and Current Reverse Leakage Vr is 210μA @ 650V, and the Voltage Forward Vf Max If is 1.7V @ 6A, and Voltage DC Reverse Vr Max is 650V, and the Current Average Rectified Io is 6A (DC), and Reverse Recovery Time trr is 0ns, and the Capacitance Vr F is 190pF @ 1V, 1MHz, it has an Operating Temperature Junction range of -55°C ~ 175°C.

The IDH06S60 is DIODE SCHOTTKY 600V 6A TO220-2 manufactured by Infenon. The IDH06S60 is available in TO-220-2 Package, is part of the Diodes, Rectifiers - Single, , and with support for DIODE SCHOTTKY 600V 6A TO220-2.

Features

CoolSiC™+ Series
Bulk Package
SiC (Silicon Carbide) Schottky Technology
600 V Voltage - DC Reverse (Vr) (Max)
6A Current - Average Rectified (Io)
1.7 V @ 6 A Voltage - Forward (Vf) (Max) @ If
No Recovery Time > 500mA (Io) Speed
0 ns Reverse Recovery Time (trr)
80 µA @ 600 V Current - Reverse Leakage @ Vr
280pF @ 1V, 1MHz Capacitance @ Vr, F
Through Hole Mounting Type