Infineon IKQ50N120CH3XKSA1

1200 V100 A3 мДж (вкл.), 1,9 мДж (выкл.)-40°C ~ 175°C (TJ)TO-247-3

Overview

IKQ100N60TAXKSA1 with pin details, that includes Automotive, AEC-Q101, TrenchStop? Series, they are designed to operate with a Tube Packaging, Part Aliases is shown on datasheet note for use in a IKQ100N60TA SP001144016, that offers Package Case features such as TO-247-3, Input Type is designed to work in Standard, as well as the Through Hole Mounting Type, the device can also be used as PG-TO247-3-46 Supplier Device Package. In addition, the Power Max is 714W, the device is offered in 225ns Reverse Recovery Time trr, the device has a 160A of Current Collector Ic Max, and Voltage Collector Emitter Breakdown Max is 600V, and the IGBT Type is Trench Field Stop, and Current Collector Pulsed Icm is 400A, and the Vce on Max Vge Ic is 2V @ 15V, 100A, and Switching Energy is 3.1mJ (on), 2.5mJ (off), and the Gate Charge is 610nC, and Td on off 25°C is 30ns/290ns, and the Test Condition is 400V, 100A, 3.6 Ohm, 15V.

IKQ120N60TXKSA1 with EDA / CAD Models, that includes Tube Packaging, they are designed to operate with a TrenchStop? Series, IGBT Type is shown on datasheet note for use in a Trench Field Stop, that offers Package Case features such as TO-247-3, Mounting Type is designed to work in Through Hole, as well as the Standard Input Type, the device can also be used as PG-TO247-3-46 Supplier Device Package. In addition, the Part Aliases is IKQ120N60T SP001138292, the device is offered in 833W Power Max, the device has a 703nC of Gate Charge, and Voltage Collector Emitter Breakdown Max is 600V, and the Switching Energy is 6.2mJ (on), 5.9mJ (off), and Td on off 25°C is 50ns/565ns, and the Current Collector Pulsed Icm is 480A, and Test Condition is 400V, 120A, 3 Ohm, 15V, and the Vce on Max Vge Ic is 2V @ 15V, 120A, and Reverse Recovery Time trr is 241ns, and the Current Collector Ic Max is 160A.

Features

High efficiency in hard switching and resonant topologies

10μsec short circuit withstand time at Tvj=175°C 

Easy paralleling capability due to positive temperature coefficient in VcEsat

Low EMI

Low Gate Charge QG

Very soft, fast recovery full current anti-parallel diode

Maximum junction temperature Tvjmax=175°C

Pb-free lead plating; RoHS compliant

Applications

Industrial UPS

Charger

Energy Storage

Three-level Solar String Inverter

Welding