Infineon IKW25N120T2FKSA1

1200 V50 A2,9 мДж-40°C ~ 175°C (TJ)TO-247-3

Overview

A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 1100 to 1600V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.

• Collector-emitter voltage range 1100 to 1600V• Very low VCEsat• Low turn-off losses• Short tail current• Low EMI• Maximum junction temperature 175°C

Features

• Low EMI

• Low Gate Charge

• Very soft, fast recovery anti-parallel Emitter Controlled HE Diode

• Qualified according to JEDEC1 for target applications

• Pb-free lead plating; RoHS compliant

• Short circuit withstand time – 10 μs

• Designed for :

- Frequency Converters

- Uninterrupted Power Supply

• TrenchStop?2nd generation for 1200 V applications offers :

- very tight parameter distribution

- high ruggedness, temperature stable behavior

• Easy paralleling capability due to positive temperature coefficient in VCE(sat)

Applications

• It is used in SMPS (Switched Mode Power Supply) to supply power to sensitive medical equipment and computers.

• It is used in UPS (Uninterruptible Power Supply) system.

• It is used in AC and DC motor drives offering speed control.

• It is used in chopper and inverters.

• It is used in solar inverters.