Infineon IKW30N60TFKSA1

600 V60 A1,46 мДж-40°C ~ 175°C (TJ)TO-247-3

Overview

The IKW30N60TFKSA1 is a 600V Discrete IGBT with very soft, fast recovery anti-parallel emitter controlled diode. TRENCHSTOP™ IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery emitter controlled diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. Discrete IGBT is ideal for hard switching applications as well as soft switching applications and other resonant applications.

Features

· Very low VCE(sat) 1.5V (typ.)

· Maximum Junction Temperature 175°C

· Short circuit withstand time 5ms

· Designed for :

- Frequency Converters

- Uninterruptible Power Supply

· TRENCHSTOP? and Fieldstop technology for 600V applications offers :

- very tight parameter distribution

- high ruggedness, temperature stable behavior

- very high switching speed

- low VCE(sat)

· Positive temperature coefficient in VCE(sat)

· Low EMI

· Low Gate Charge

· Very soft, fast recovery anti-parallel Emitter Controlled HE diode

· Qualified according to JEDEC1

for target applications

· Pb-free lead plating; RoHS compliant

Applications

IKW30N60TFKSA1                APPLICATIONS

Power for processors, ASICS, FPGAs, and RF chipsets

Portable instrumentation and medical devices

Space constrained devices