Infineon IKW50N60H3FKSA1

600 V100 A2,36 мДж-40°C ~ 175°C (TJ)TO-247-3

Overview

The IKW50N60H3FKSA1 is a High Speed IGBT in Trench and field-stop technology with soft, fast recovery anti-parallel diode. The high speed device is used to reduce the size of the active components (25 to 70kHz). The high speed 3 family provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-OFF switching behaviour, leading to low turn-OFF losses.

Features

• Low switching losses for high efficiency

• Fast switching behaviour with low EMI emissions

• Optimized diode for target applications, meaning further improvement in switching losses

• Low gate resistor selection is possible (down to 5R) whilst maintaining excellent switching behaviour

• Short-circuit capability

• Excellent performance

• Low switching and conduction losses

• Very good EMI behavior

Applications

• uninterruptible power supplies

• welding converters

• converters with the high switching frequency

• Alternative Energy

• Power Management