Infineon IPG20N10S4L35ATMA1

MOSFET (оксид металла)Затвор логического уровня2 N-канала (сдвоенные)100V20A35 мОм @ 17 А, 10 В2,1 В @ 16 мкА

Overview

The IPG20N10S4L22ATMA1 is MOSFET 2N-CH 8TDSON, that includes Automotive, AEC-Q101, OptiMOS? Series, they are designed to operate with a Tape & Reel (TR) Packaging, Part Aliases is shown on datasheet note for use in a IPG20N10S4L-22 IPG20N10S4L22XT SP000866570, that offers Mounting Style features such as SMD/SMT, Package Case is designed to work in 8-PowerVDFN, as well as the Si Technology, it has an Operating Temperature range of -55°C ~ 175°C (TJ). In addition, the Mounting Type is Surface Mount, the device is offered in 1 Channel Number of Channels, the device has a PG-TDSON-8-4 (5.15x6.15) of Supplier Device Package, and Configuration is Dual, and the FET Type is 2 N-Channel (Dual), and Power Max is 60W, and the Transistor Type is 1 N-Channel, and Drain to Source Voltage Vdss is 100V, and the Input Capacitance Ciss Vds is 1755pF @ 25V, and FET Feature is Logic Level Gate, and the Current Continuous Drain Id 25°C is 20A, and Rds On Max Id Vgs is 22 mOhm @ 17A, 10V, and the Vgs th Max Id is 2.1V @ 25μA, and Gate Charge Qg Vgs is 27nC @ 10V, and the Pd Power Dissipation is 60 W, it has an Maximum Operating Temperature range of + 175 C, it has an Minimum Operating Temperature range of - 55 C, and Fall Time is 18 ns, and the Rise Time is 3 ns, and Vgs Gate Source Voltage is +/- 16 V, and the Id Continuous Drain Current is 20 A 20 A, and Vds Drain Source Breakdown Voltage is 100 V 100 V, and the Vgs th Gate Source Threshold Voltage is 1.6 V, and Rds On Drain Source Resistance is 20 mOhms 20 mOhms, and the Transistor Polarity is N-Channel, and Typical Turn Off Delay Time is 30 ns, and the Typical Turn On Delay Time is 5 ns, and Qg Gate Charge is 21 nC, and the Channel Mode is Enhancement.

IPG20N10S4L-35 with circuit diagram, that includes SMD/SMT Mounting Style, they are designed to operate with a 1 Channel Number of Channels, Package Case is shown on datasheet note for use in a TDSON-8, that offers Packaging features such as Reel, Part Aliases is designed to work in IPG20N10S4L35ATMA1 IPG20N10S4L35XT SP000859022, as well as the XPG20N10 Series, the device can also be used as Si Technology. In addition, the Transistor Polarity is N-Channel, the device is offered in 1 N-Channel Transistor Type.

Features

• Dual N-channel Logic Level - Enhancement mode

• AEC Q101 qualified

• MSL1 up to 260°C peak reflow

• 175°C operating temperature

• Green Product (RoHS compliant)

• 100% Avalanche tested

Applications

• PLC analog input modules

• Weigh scales and strain-gauge digitizers

• Temperature, pressure measurement

• Lab instrumentation

• Process analytics